Title:
金属間誘電体として用いられる低K及び超低Kの有機シリケート膜の疎水性の回復
Document Type and Number:
Japanese Patent JP4594988
Kind Code:
B2
Abstract:
Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the S:L atoms in the network. Si-R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si-R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)xSiR'y where X and Y are integers from 1 to 3 and 3 to I respectively, and where R and R' are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.
Inventors:
Chakra Pani, Nilpama
Colburn, Matthew, Yi
Dimitra Coporos, Christos, Dee
Nitta, Satiana Layana, Ve
Pfeiffer, dark
Pulshozaman, Sampass
Colburn, Matthew, Yi
Dimitra Coporos, Christos, Dee
Nitta, Satiana Layana, Ve
Pfeiffer, dark
Pulshozaman, Sampass
Application Number:
JP2007538874A
Publication Date:
December 08, 2010
Filing Date:
October 27, 2004
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/316; H01L21/312; H01L21/768; H01L23/522
Domestic Patent References:
| JP2003282698A | ||||
| JP2003508895A |
Foreign References:
| WO2003077032A1 |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi