To make automatically performable multipoint measurement of a semiconductor wafer by storing an enlarged image when the degree of matching between the shape of a specified part of an enlarged image and the shape of a specified part of a sample image is out of a threshold.
A primary electron beam 4 drawn out by a draw-out voltage applied across a cathode 1 and a first anode 2 is accelerated by voltage Vacc applied to a second anode 3 to advance to a lens system. A scanning signal of a deflecting coil 8 is controlled according to an observation magnification by a deflection control device 9. A secondary electron 10 generated from the sample by the primary electron beam scanning on a wafer 7 is detected by a secondary electron detector 11. The secondary electron information detected by the secondary electron detector 1 is amplified by an amplifier 12 and displayed on a CRT 13. For multipoint measurement, an X-Y stage for moving the wafer 7 in the vertical direction to the radiating direction of the primary electron beam 4 and an image shift function of largely moving the irradiation portion of the primary electron beam 4 are provided.
TAMOCHI RYUICHIRO
KUROSAWA KOICHI
MIZUNO TAKESHI
UEDA KAZUHIRO
HITACHI SCIENCE SYSTEMS LTD