Title:
SCREENING METHOD OF BASE-EMITTER VOLTAGES OF TRANSISTORS
Document Type and Number:
Japanese Patent JPS5494884
Kind Code:
A
Abstract:
PURPOSE: To measure base-emitter voltages by using a diode-connected reference transistor under the same base-collector voltage.
CONSTITUTION: The collector and base of a reference transistor 2 is shorted and the collector current Ic2 is made constant by a resistor 7. Ic2 is set at the collector current value desired to measure. A DC ammeter 6 is put to the collector of the transistor to be measured 1 and its collector- emitter voltage is made the same as that of the reference transistor 2. When the collector current Icl is measured, VBE1 may be screened with good accuracy. Since VBEI is nearly the same in temperature characteristic as VBE2, it is unaffected by ambient temperature.
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Inventors:
YAMADA TOMOU
HAMAMOTO SHIGEO
HAMAMOTO SHIGEO
Application Number:
JP216478A
Publication Date:
July 26, 1979
Filing Date:
January 11, 1978
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01R31/26; (IPC1-7): G01R31/26