Title:
SELF-EXCITED SEMICONDUCTOR LASER DEVICE
Document Type and Number:
Japanese Patent JP3199158
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is of low noise and capable of operating stably at high temperatures keeping a vertical radiation angle θ small.
SOLUTION: A self-excited semiconductor laser device is equipped with a first conductivity-type semiconductor substrate 11 and a laminated structure which is formed on the substrate 11 including an active layer 14. The laminated structure includes a first conductive first clad layer 13 provided below the active layer 14, a second conductivity-type second clad layer 15 provided above the active layer 14 and possessed of a stripe-like ridge, and a saturable absorption film 18. The saturable absorption film 18 is equipped with a storage region 18b which stores optical excitation carriers and is provided apart from the surface of the second clad layer 14.
Inventors:
Yasuo Suga
Kentaro Tani
Tadashi Takeoka
Akiyoshi Sugawara
Kentaro Tani
Tadashi Takeoka
Akiyoshi Sugawara
Application Number:
JP33969795A
Publication Date:
August 13, 2001
Filing Date:
December 26, 1995
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01S5/00; H01S5/065; H01S5/223; H01S5/22; (IPC1-7): H01S5/065
Domestic Patent References:
| JP645683A | ||||
| JP8316563A | ||||
| JP5183235A | ||||
| JP2174178A | ||||
| JP7193316A | ||||
| JP63257286A | ||||
| JP7263794A | ||||
| JP6260716A | ||||
| JP6196810A | ||||
| JP2275689A |
Attorney, Agent or Firm:
Shusaku Yamamoto