Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
Japanese Patent JP2023169120
Kind Code:
A
Abstract:
To provide a semiconductor device low in power consumption and resistant to high temperature.SOLUTION: A semiconductor device has a first layer, and a second layer positioned above the first layer. The first layer has a first cell and first to third circuits. The second layer has a second cell, and fourth and fifth circuits. The first, second, and fourth circuits have functions to convert digital data into analog current. The first cell calculates a product of a value corresponding to analog current from the first circuit and a value corresponding to analog current from the second circuit, and inputs the calculation result to the third circuit as current. The third circuit generates analog current from the inputted current. The second cell calculates a product of a value corresponding to analog current from the third circuit and a value corresponding to analog current from the fourth circuit, and inputs the calculation result to the fifth circuit as current. The fifth circuit generates analog current from the inputted current.SELECTED DRAWING: Figure 1
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Inventors:
KUROKAWA YOSHIMOTO
OSHITA SATOSHI
RIKIMARU HIDEFUMI
OSHITA SATOSHI
RIKIMARU HIDEFUMI
Application Number:
JP2023078686A
Publication Date:
November 29, 2023
Filing Date:
May 11, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G06G7/60; G06G7/14; G06G7/16; G06G7/184
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