Title:
SEMICONDUCTOR DEVICE AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JPH07122568
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor device, and a fabrication method thereof, in which the reliability can be enhanced by protecting the surface protective layer against cracking.
CONSTITUTION: An Al electrode layer 4 is subjected to self-aligned etching to form an electrode wiring and then the pointed part is eliminated from the side wall of silicon oxide 3 before a protective film 5 is formed on the surface thereof. Since the protective film 5 can be formed flatly and uniformly cracking is retarded in the protective film 5.
Inventors:
ASAI MAKOTO
OKADA ATSUSANE
TAKAOKA MOTOAKI
OKADA ATSUSANE
TAKAOKA MOTOAKI
Application Number:
JP28991793A
Publication Date:
May 12, 1995
Filing Date:
October 25, 1993
Export Citation:
Assignee:
OMRON TATEISI ELECTRONICS CO
International Classes:
H01L21/3213; H01L21/3205; (IPC1-7): H01L21/3213; H01L21/3205
Attorney, Agent or Firm:
Yasuo Itaya
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