Title:
半導体素子中間体、金属含有膜形成用組成物、半導体素子中間体の製造方法、半導体素子の製造方法
Document Type and Number:
Japanese Patent JP7070935
Kind Code:
B2
Abstract:
Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate.
Inventors:
Hiroko Wachi
Yasushi Kayaba
Hirofumi Tanaka
Kenichi Fujii
Yasushi Kayaba
Hirofumi Tanaka
Kenichi Fujii
Application Number:
JP2019554237A
Publication Date:
May 18, 2022
Filing Date:
November 13, 2018
Export Citation:
Assignee:
Mitsui Chemicals, Inc.
International Classes:
H01L21/3065
Domestic Patent References:
| JP58137835A | ||||
| JP11295544A | ||||
| JP5109779A | ||||
| JP4027121A | ||||
| JP2012199361A | ||||
| JP1501345A | ||||
| JP2009164406A | ||||
| JP8130247A | ||||
| JP3104127A | ||||
| JP2005159264A | ||||
| JP2013076973A | ||||
| JP2008235332A |
Foreign References:
| WO2016208300A1 | ||||
| WO2014129248A1 | ||||
| WO2017086361A1 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazuho
Hiroshi Fukuda
Kato Kazuho
Hiroshi Fukuda