To prevent generation of burn-in stress deficiency during a burn-in operation test of a semiconductor device.

This semiconductor device has a means for detecting an overcurrent flow during the burn-in operation test. The detection means compares the voltage at a first spot in power source conductors with the voltage at a second spot at a distance from the first spot, to thereby detect the overcurrent flow during the burn-in operation test. A means is also provided, for cutting-off a current supply to the semiconductor device when detecting the overcurrent flow in the semiconductor device during the test.