Title:
半導体装置および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5569162
Kind Code:
B2
Abstract:
The semiconductor device according to the invention and the method of manufacturing the semiconductor device according to the invention facilitate lowering the ON-state voltage, preventing the breakdown voltage from lowering, lowering the gate capacitance, and reducing the manufacturing costs.
Inventors:
Takeyoshi Nishimura
Application Number:
JP2010133366A
Publication Date:
August 13, 2014
Filing Date:
June 10, 2010
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/336
Attorney, Agent or Firm:
Akinori Sakai