Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3399119
Kind Code:
B2
Abstract:
PURPOSE: To eliminate one photo process by opening windows at the same time for contact holes at the places where the film thicknesses of oxide films are different by opening the windows while confirming in etching monitor regions instead of the conventional process in which a high-concentration n-layer was formed by the ion-implantation of arsenic by using photoresist as mask.
CONSTITUTION: Ion-implantation of arsenic is performed and n+ region 9 is formed by using a second insulation film 7 formed on a semiconductor wafer and a gate electrode 8 formed by polysilicon as mask. Also, to form a contact hole 11, the contact hole 11 above a p-region 5 covered by a fourth insulation film 10 and a second insulation film 3 and the contact hole 11 above n+ region 9 covered by a fourth insulation film are formed simultaneously by etching while monitoring a monitor region.
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Inventors:
Tatsuhiko Fujihira
Seiji Momota
Takeyoshi Nishimura
Kazutoshi Sugimura
Masao Yoshino
Takashi Kobayashi
Seiji Momota
Takeyoshi Nishimura
Kazutoshi Sugimura
Masao Yoshino
Takashi Kobayashi
Application Number:
JP27619594A
Publication Date:
April 21, 2003
Filing Date:
November 10, 1994
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/28; H01L21/265; H01L21/266; H01L21/306; H01L21/316; H01L21/336; H01L21/8238; H01L29/78; (IPC1-7): H01L29/78; H01L21/265; H01L21/28; H01L21/306; H01L21/316; H01L21/336
Domestic Patent References:
| JP43966A | ||||
| JP5283628A | ||||
| JP3135062A | ||||
| JP59200422A | ||||
| JP62229952A |
Attorney, Agent or Firm:
Masaharu Shinobe
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