SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Title:

SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JP3535280

Kind Code:

B2

Abstract:

PURPOSE: To provide a semiconductor device of high reliability wherein exfoliation of a wiring layer is not generated on the interface between a titanium based metal wiring layer and an insulating layer of a semiconductor device which includes the insulating film containing Si-F bonds and the titanium based metal wiring layer.
CONSTITUTION: The title semiconductor device has a substrate, an insulating film 15 which is formed on the substrate and contains Si-F bonds, and a titanium based metal wiring layer 17 formed on the insulating film 15. The concentration of fluorine in the titanium based metal wiring layer is lower than 1×1020 atoms/cm3.

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Inventors:

Matsunou, Tadashi

Application Number:

JP24397395A

Publication Date:

June 07, 2004

Filing Date:

August 30, 1995

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L21/28; H01L21/3205; H01L21/768; H01L23/52; H01L23/522; H01L23/532; H01L21/316; (IPC1-7): H01L21/768; H01L21/28; H01L21/3205

Other References:

ＬｏｗＤｉｅｌｅｃｔｒｉｃＣｏｎｓｔａｎｔＩｎｔｅｒｌａｙｅｒＵｓｉｎｇＦｌｕｏｒｉｎｅ−ＤｏｐｅｄＳｉｌｉｃｏｎＯｘｉｄｅ，Ｊｐｎ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，日本，Ｖｏｌ．３３，Ｐａｒｔ１，Ｎｏ．１Ｂ，ｐｐ．４０８ − ４１２

Attorney, Agent or Firm:

鈴江武彦

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