Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH09213785
Kind Code:
A
Abstract:
To provide a semiconductor device which has a fine element isolating region which can get the shape of a flat surface, and does not cause the deterioration of element property, and its manufacturing method.
A gate oxide film 102 and a first gate electrode 103 are made all over the surface, and a taper groove of 80° or under is provided in the element isolating region, and ions of channel stopper impurities are implanted. Then, an oxide film is accumulated, and by using chemical polishing method, it is flattened until the first gate electrode 103 is exposed, and the groove is stopped with an oxide film 106, and a second electrode 107 is made, and the first electrodes 103 and 107 are made in desired form.
Inventors:
SUDO ITSUKI
KIMURA SHINICHIRO
KUSUKAWA KIKUO
HONMA YOSHIO
YOSHIGAMI JIRO
KIMURA SHINICHIRO
KUSUKAWA KIKUO
HONMA YOSHIO
YOSHIGAMI JIRO
Application Number:
JP1965596A
Publication Date:
August 15, 1997
Filing Date:
February 06, 1996
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/76; H01L29/78; (IPC1-7): H01L21/76; H01L29/78
Attorney, Agent or Firm:
Ogawa Katsuo