Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2004319974
Kind Code:
A
Abstract:
To provide a semiconductor device for suppressing the influence of extrinsic charges, with convenience, low cost, small size, low on-resistance and high withstanding voltage, and its manufacturing method.
The semiconductor device includes a first and second electrodes formed on a substrate; and a drift layer which is formed between the first electrode and the second electrode and which is conductive in on state and depleted in off state. A low concentration layer which has a polarity opposite to that of the drift layer and which is depleted in the off state, is provided to the outer side of the drift layer.
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Inventors:
KOMACHI TOMONORI
Application Number:
JP2004068488A
Publication Date:
November 11, 2004
Filing Date:
March 11, 2004
Export Citation:
Assignee:
YOKOGAWA ELECTRIC CORP
International Classes:
H01L29/78; H01L21/336; H01L21/76; H01L29/06; H01L29/12; H01L29/739; (IPC1-7): H01L29/78; H01L21/336