Title:
Semiconductor device and its manufacturing method
Document Type and Number:
Japanese Patent JP6029667
Kind Code:
B2
Abstract:
A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained.
Inventors:
Mamoru Terai
Shiori Idaka
Yoshiyuki Nakagi
Yoshiyuki Suehiro
Shiori Idaka
Yoshiyuki Nakagi
Yoshiyuki Suehiro
Application Number:
JP2014524496A
Publication Date:
November 24, 2016
Filing Date:
July 11, 2012
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L23/29; H01L21/301; H01L21/60; H01L23/31
Domestic Patent References:
| JP2004253678A | ||||
| JP2011228336A | ||||
| JP2006318988A | ||||
| JP2003124406A | ||||
| JP2006032617A |
Attorney, Agent or Firm:
Fukami patent office
Previous Patent: Directive ultrasonic wave transmission stylus
Next Patent: ECONOMICAL DRIVING GUIDE DEVICE
Next Patent: ECONOMICAL DRIVING GUIDE DEVICE