Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP7145063
Kind Code:
B2
Abstract:
A semiconductor device includes a first insulating layer, an optical waveguide formed on the first insulating layer, a fixed charge layer formed on the first insulating layer such that the fixed charge layer covers the optical waveguide, and a second insulating layer formed on the fixed charge layer.
Inventors:
Seigo Namioka
Yasutaka Nakashiba
Yasutaka Nakashiba
Application Number:
JP2018239567A
Publication Date:
September 30, 2022
Filing Date:
December 21, 2018
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
G02F1/025; G02B6/12; G02B6/122; G02B6/13
Domestic Patent References:
| JP2018014396A | ||||
| JP2012198465A |
Foreign References:
| US20120321240 | ||||
| WO2016125772A1 | ||||
| WO2013146317A1 |
Other References:
SHARMA, R. et al.,"Cladding-dependent nature of electro-optic effects in silicon waveguides",2016 Conference on Lasers and Electro-Optics (CLEO),STh4E.2,米国,IEEE,2016年12月19日,pp. 1-2
Attorney, Agent or Firm:
Patent Attorney Tsutsui International Patent Office