Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP7414677
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor device includes first, second, and third conductive members, a semiconductor member, and a first insulating member. The semiconductor member includes a first semiconductor region provided on the first conductive member, a second semiconductor region provided on a portion of the first semiconductor region, and a third semiconductor region provided on the second semiconductor region. An impurity concentration in the third semiconductor region is greater than in the first semiconductor region. The second conductive member includes a first conductive portion electrically connected to the second and third semiconductor regions. The third conductive member is provided on an other portion of the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third conductive member. The at least a portion of the first insulating member electrically insulates between the semiconductor member and the third conductive member.
Inventors:
Baba Shotaro
Yusuke Kobayashi
Hiroaki Kato
Toshifumi Nishiguchi
Yusuke Kobayashi
Hiroaki Kato
Toshifumi Nishiguchi
Application Number:
JP2020154752A
Publication Date:
January 16, 2024
Filing Date:
September 15, 2020
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
International Classes:
H01L29/78; H01L21/336; H01L29/41
Domestic Patent References:
| JP2004031385A | ||||
| JP2019186506A | ||||
| JP2014060298A |
Foreign References:
| US20180337236 |
Attorney, Agent or Firm:
Patent Attorney Firm iX
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