Title:
Semiconductor device and its producing method
Document Type and Number:
Japanese Patent JP6121350
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor device includes a drain region, a source region, a channel region, a first gate insulator film provided on the channel region, a second gate insulator film provided on the channel region to be adjacent to the first gate insulator film on the source region side of the first gate insulator film, a first gate electrode provided on the first gate insulator film, and a second gate electrode provided on the second gate insulator film. An electrical thickness of the second gate insulator film is less than an electrical thickness of the first gate insulator film. A portion of the first gate electrode is provided on the second gate insulator film. A work function of the second gate electrode is higher than a work function of the first gate electrode.
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Inventors:
Toshitaka Miyata
Application Number:
JP2014047168A
Publication Date:
April 26, 2017
Filing Date:
March 11, 2014
Export Citation:
Assignee:
Microsoft Technology Licensing, LLC
International Classes:
H01L29/78; H01L21/336; H01L21/8234; H01L27/088; H01L29/423; H01L29/49
Domestic Patent References:
| JP2013045953A | ||||
| JP59121979A | ||||
| JP2009212237A |
Foreign References:
| US20010017390 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Tadahiko Ito
Shinsuke Onuki