To provide a testing method for a semiconductor device capable of precisely testing characteristics of semiconductor switches without requiring a special terminal for testing.

During a characteristic testing of a semiconductor device 100, a control circuit 102 corresponding to a first output circuit sets both P-type MIS transistor TP1 and N-type MIS transitor TN1 to be turned on. Another control circuit 102 corresponding to a second output circuit sets a P-type MIS transistor TP2 turned on and an N-type MIS transistor TN2 turned off. A current source is connected between a probe #1 and a probe #4, and electric potential difference between an output terminal Dout1 of the first output circuit and an output terminal Dout2 of the second output circuit is measured by using probes #2 and #3 to measure the on-resistance of the P-type MIS transistor TP1.