Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3303790
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent changes in electro-migration(EM) life and unexpected manufacture of a product having a deteriorated wiring reliability, even when conventional step conditions such as a film formation pressure of an aluminum alloy film are controlled.
SOLUTION: When a film of aluminum alloy is formed on a semiconductor substrate by a sputtering process, partial pressure ratios of nitrogen and oxygen included in an argon gas during the sputtering film formation to the entire sputtering gas are controlled to be about 51 ppm or less and about 11 ppm or less respectively to thereby form a film of aluminum alloy. Or the film of aluminum alloy is formed so that the amounts of nitrogen, oxygen and hydrogen included in the film controllably adjusted to be about 0.003 atomic % or less, about 0.01 atomic % and about 0.006 atomic % respectively.
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Inventors:
Masunori Takamori
Toru Nishiwaki
Toru Nishiwaki
Application Number:
JP24805398A
Publication Date:
July 22, 2002
Filing Date:
September 02, 1998
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/203; C23C14/34; C23C14/54; H01L21/28; H01L21/285; (IPC1-7): H01L21/285; C23C14/34; C23C14/54; H01L21/203
Domestic Patent References:
| JP200063971A | ||||
| JP8186084A | ||||
| JP837185A | ||||
| JP5287518A | ||||
| JP314227A | ||||
| JP61124562A | ||||
| JP61193441A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)
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