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Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH0389555
Kind Code:
A
Abstract:

PURPOSE: To increase a driving capacity by reducing the thicknesses of a part of a channel region in contact with an element isolator and a field oxide film near the part smaller than that of the other part, and extending the junction of a source or a drain to the end of a channel width direction.

CONSTITUTION: This element is a field effect element in which two sources/ drains 4 and a channel region 12 between them are induced by applying a voltage to a gate electrode 3 between two source/drain 4. A gate oxide film 10 is formed between the electrode 3 and a substrate. A leading electrode 13 is extended from the source/drain 4 to a first field oxide film 2, and connected to wirings through a contact hole 8 on the film 2. The film 10 is specified in the lateral direction of a channel region by a second field oxide film 5 to become an effective channel region. A field oxide film has thicknesses of two stages. Since the side of the channel region is specified by the film 5, a reduction in the channel width due to bird's beak, etc., can be prevented, and a wide channel width can be obtained.


Inventors:
HIRAO MITSURU
MINAMI MASATAKA
YADORI SHOJI
Application Number:
JP22444489A
Publication Date:
April 15, 1991
Filing Date:
September 01, 1989
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01L21/331; H01L21/336; H01L21/76; H01L21/8249; H01L27/06; H01L29/06; H01L29/73; H01L29/08; H01L29/10; H01L29/732; H01L29/78; (IPC1-7): H01L21/331; H01L21/76; H01L27/06; H01L29/73; H01L29/784
Attorney, Agent or Firm:
Katsuo Ogawa (2 outside)



 
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