PURPOSE: To obtain an undoped single-crystal semiconductor film of large area through a solid growth method.

CONSTITUTION: A first process where a thermal oxide film 12 is formed on a silicon substrate 11, a second process where silicon ion 13 is implanted into the surface of the thermal oxide film 12 to form a phosphorus layer 14 of high concentration, a third process where the thermal oxide film 12 and the phosphorous layer 14 are partially removed for the formation of a seed section 15, a fourth process where an amorphous silicon film 16 is deposited on all the surface of the substrate 11, and a fifth process where the amorphous silicon film 16 is thermally treated into a single-crystal silicon film 17 are provided.