Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH07335747
Kind Code:
A
Abstract:
PURPOSE: To reduce a capacitance between metal wirings and prevent leak current, by providing a gap having lower specific dielectric constant to a groove between wirings and also coating the metal wirings and groove with insulation film. CONSTITUTION: After coating fine miniaturized metal wirings 2 and the groove between these wirings are coated with insulating film, a gap 3 having the specific dielectric constant as small as about 1 is formed to the groove. By forming an interlayer insulating film 5 covering the gap 3, a leak current between wirings is also reduced while electrostatic capacitance between the metal wirings 2 is reduced. In more practical, fine metal wiring 2 is formed with the wiring process, the metal wiring 2 and the groove between wirings are coated with an insulating film and a gap 3 is provided between the adjacent metal wirings in the process to form the insulating film 8 to the groove using the CVD method, etc. As a result, the time for charging or discharging the metal wiring with an electrical signal can be reduced in comparison with the related art. Moreover, propagation rate of electrical signal can be raised and power consumption can also be reduced.
Inventors:
NISHIOKA TAIJO
TANAKA TAKESHI
BOKU YOSHIHIRO
OKUNO YASUTOSHI
TANAKA TAKESHI
BOKU YOSHIHIRO
OKUNO YASUTOSHI
Application Number:
JP12387194A
Publication Date:
December 22, 1995
Filing Date:
June 06, 1994
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC
International Classes:
H01L21/768; H01L23/522; (IPC1-7): H01L21/768
Attorney, Agent or Firm:
Akira Asamura (3 outside)