SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, GAS SENSOR AND MANUFACTURING METHOD FOR GAS SENSOR

Title:

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, GAS SENSOR AND MANUFACTURING METHOD FOR GAS SENSOR

Document Type and Number:

Japanese Patent JP2002340832

Kind Code:

A

Abstract:

To provide a gas sensor having little possibility of breaking a lead wire, allowing the use of a lead wire having small line diameter and low rigidity, and capable of reducing the power consumption.

The lead wire 6 is joined to a heater electrode 3 and a sensitive body electrode 8 by an ultrasonic thermo compression bonding, whereby as compared with the case of joining the lead wire to the electrode by another general welding method, the wire 6 is hard to break, so that the lead wire 6 having a small wire diameter and low rigidity can be used. The use of the lead wire 6 having a small wire diameter can reduce radiation due to heat transmitted to the lead wire 6, so that the power consumption of a heater for heating the sensitive body membrane 9 to a designated temperature can be reduced.

Inventors:

SASABE SHIGERU
INOUE YOSHIKATSU
HATTORI AKIYOSHI
YOSHIIKE NOBUYUKI

Application Number:

JP2001152076A

Publication Date:

November 27, 2002

Filing Date:

May 22, 2001

Export Citation:

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Assignee:

MATSUSHITA REFRIGERATION
MATSUSHITA ELECTRIC IND CO LTD

International Classes:

G01N27/12; H01L21/60; (IPC1-7): G01N27/12; H01L21/60

Attorney, Agent or Firm:

Fumio Iwahashi (2 others)

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