To provide a semiconductor device manufacturing method capable of precisely forming a two-stage LLD structure.
The method has the steps of: injecting impurity ions to a semiconductor layer 30a using a gate electrode 30g as a mask; forming a first resist pattern 41 planarly overlaid on a first region 41a adjacent to the gate electrode 30g and both ends of a channel region 30c in a channel longitudinal direction; injecting the impurity ions to the semiconductor layer 30a using the first resist pattern 41 as a mask; forming a second resist pattern 42 planarly overlaid on a second region 42a adjacent to a side of at least a single side of the first region 41 opposite to the channel region 30c; injecting the impurity ions to the semiconductor layer 30a using the first resist pattern 41 and the second resist pattern 42 as masks; and removing the first resist pattern 41 and the second resist pattern 42.
IIZUKA SHOTA
Osamu Suzawa
Kazuhiko Miyasaka