Title:
半導体装置およびそれを用いたプラズマディスプレイ駆動用半導体集積回路装置
Document Type and Number:
Japanese Patent JP4424368
Kind Code:
B2
Abstract:
A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.
Inventors:
Kenshi Hara
Junichi Sakano
Shinji Shirakawa
Junichi Sakano
Shinji Shirakawa
Application Number:
JP2007108802A
Publication Date:
March 03, 2010
Filing Date:
April 18, 2007
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L29/786; G09G3/20; G09G3/288; G09G3/291; G09G3/293; G09G3/294; G09G3/296; G09G3/298; H01L21/336
Domestic Patent References:
| JP2003347549A | ||||
| JP2006349721A |
Attorney, Agent or Firm:
Manabu Inoue