SEMICONDUCTOR DEVICE - SANYO ELECTRIC CO

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2005109148

Kind Code:

A

Abstract:

To provide a high-current compliant low-temperature polysilicon TFT, capable of deterring as much as possible the deterioration of characteristics due to self-heating at high-current driving.

This semiconductor device is a TFT (thin-film transistor) comprising a glass substrate 10, an active layer 12, and a gate electrode 14 formed thereon via a gate insulating film 13. This TFT comprises a heat radiating bottom metal layer BM below the channel region 12c, or below the whole active layer 12 capable of radiating Joule heat generated by the channel region 12c upon the drive of the TFT to the outside of the TFT. Further, in addition to above-mentioned configuration, the bottom metal layer BM is connected with the gate electrode 14 or the source region 12s of the active layer 12.

Inventors:

YOKOYAMA RYOICHI
YAMANO KOJI
TAKEDA YASUHIRO
HIROZAWA KOJI

Application Number:

JP2003340653A

Publication Date:

April 21, 2005

Filing Date:

September 30, 2003

Export Citation:

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Assignee:

SANYO ELECTRIC CO

International Classes:

H01L29/41; H01L21/00; H01L21/3205; H01L23/34; H01L23/52; H01L29/423; H01L29/49; H01L29/786; (IPC1-7): H01L29/786; H01L21/3205; H01L29/41; H01L29/423; H01L29/49

Attorney, Agent or Firm:

Katsuhiko Sudo

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