To provide a semiconductor device capable of reducing electric resistance of wiring.
The semiconductor device comprises: a thin film transistor formed on a substrate having an insulating surface; a first wiring formed on the substrate; a first insulating film formed on an active layer consisting of polycrystalline silicon film of the thin film transistor, a gate insulating film, a gate electrode and the first wiring; a second wiring that is formed on the first insulating film and is electrically connected with the first wiring via a plurality of contact holes disposed on the first insulating film; a second insulating film formed on the thin film transistor and the second wiring; a pixel electrode that is formed on the second insulating film and is electrically connected with the thin film transistor via the contact holes disposed on the second insulating film; and a counter substrate disposed to face opposite to the substrate.
OTANI HISASHI
OGATA YASUSHI
YAMAZAKI SHUNPEI
JPH10198292A | 1998-07-31 | |||
JPH08262494A | 1996-10-11 | |||
JPH05241200A | 1993-09-21 | |||
JPH07175038A | 1995-07-14 | |||
JPH0553127A | 1993-03-05 | |||
JPH01134343A | 1989-05-26 | |||
JPH04313729A | 1992-11-05 | |||
JPH06160904A | 1994-06-07 | |||
JPH07294870A | 1995-11-10 |
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