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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2006099134
Kind Code:
A
Abstract:

To provide a semiconductor device capable of reducing electric resistance of wiring.

The semiconductor device comprises: a thin film transistor formed on a substrate having an insulating surface; a first wiring formed on the substrate; a first insulating film formed on an active layer consisting of polycrystalline silicon film of the thin film transistor, a gate insulating film, a gate electrode and the first wiring; a second wiring that is formed on the first insulating film and is electrically connected with the first wiring via a plurality of contact holes disposed on the first insulating film; a second insulating film formed on the thin film transistor and the second wiring; a pixel electrode that is formed on the second insulating film and is electrically connected with the thin film transistor via the contact holes disposed on the second insulating film; and a counter substrate disposed to face opposite to the substrate.


Inventors:
KOYAMA JUN
OTANI HISASHI
OGATA YASUSHI
YAMAZAKI SHUNPEI
Application Number:
JP2005340575A
Publication Date:
April 13, 2006
Filing Date:
November 25, 2005
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
G02F1/1368; G09F9/30; H01L29/786
Domestic Patent References:
JPH10198292A1998-07-31
JPH08262494A1996-10-11
JPH05241200A1993-09-21
JPH07175038A1995-07-14
JPH0553127A1993-03-05
JPH01134343A1989-05-26
JPH04313729A1992-11-05
JPH06160904A1994-06-07
JPH07294870A1995-11-10