To provide a semiconductor device, wherein movement of a bonding pad caused in bonding processing is suppressed without widening a wiring interval, manufacturing efficiency is excellent, and a die size and the whole device can be made small.
The semiconductor device is equipped with the bonding pad 6 formed by laminating at least an insulating film 3, a wiring layer 4, and a protective film 5 covering the insulating film 3 and wiring layer 4 in this order on a semiconductor substrate 2, forming an aperture portion 51 in the protective film 5 by removing at least a portion of the protective film 5, and thus exposing the wiring layer 4 in the aperture portion 51, wherein the wiring layer 4 has a recessed portion 7 formed at least partially at a periphery of the bonding pad 6 and the protective film 5 is embedded in the recessed portion 7.
| JPH05343466A | 1993-12-24 | |||
| JPH05326616A | 1993-12-10 | |||
| JPH05226405A | 1993-09-03 | |||
| JP2005260207A | 2005-09-22 | |||
| JPS63141330A | 1988-06-13 | |||
| JP2001176966A | 2001-06-29 | |||
| JP2004071679A | 2004-03-04 |
Tadashi Takahashi
Naoki Ofusa
Kazunori Onami
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