Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2011216897
Kind Code:
A
Abstract:
To make uniform electric characteristics of semiconductor elements formed on a plurality of element forming planes at different heights.
The semiconductor device S includes a semiconductor layer 1 having a plurality of element forming planes 50 disposed at different heights formed in a stepped constitution, semiconductor elements 51, 52 formed in regions including the element forming planes 50, respectively, and a step compensation insulating film 28 which covers the semiconductor elements 51, 52 and has a stepped surface along the element forming planes 50 with respect to the semiconductor layer 1. Furthermore, the semiconductor layer 1 has the same thickness in each element forming plane 50.
Inventors:
FUKUSHIMA YASUMORI
TAKATO YUTAKA
MORIGUCHI MASAO
TAKATO YUTAKA
MORIGUCHI MASAO
Application Number:
JP2011134200A
Publication Date:
October 27, 2011
Filing Date:
June 16, 2011
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L27/092; H01L21/02; H01L21/336; H01L21/8238; H01L27/08; H01L27/12; H01L29/786
Domestic Patent References:
| JPH11233449A | 1999-08-27 | |||
| JPH10199840A | 1998-07-31 | |||
| JPH1145862A | 1999-02-16 | |||
| JPH05326692A | 1993-12-10 | |||
| JPS63177564A | 1988-07-21 | |||
| JP2001267577A | 2001-09-28 | |||
| JPH03285351A | 1991-12-16 |
Attorney, Agent or Firm:
Hiroshi Maeda
Yuji Takeuchi
Yuji Takeuchi