To provide a semiconductor device in which a capacitative insulation film forming a compensation capacitative element is not broken.
The semiconductor device comprises a first power supply terminal 29 to which a first voltage is supplied, a second power supply terminal 23 to which a second voltage is supplied, a plurality of compensation capacitative elements 4 respectively having a capacitative insulation film 42 and a first and a second electrodes formed sandwiching the capacitative insulation film 42 and disposed in series between the first and the second power supply terminals 29, 23, first capacity connection wiring formed on a first wiring layer connecting an odd-numbered compensation capacitative elements 4 with an subsequent even-numbered compensation capacitative elements 4, second capacity connection wiring formed on a second wiring layer connecting the even-numbered compensation capacitative elements 4 with another subsequent odd-numbered compensation capacitative elements 4, and shield wiring 5 provided next to one of the first and the second capacity connection wiring for supplying substantially fixed voltage.
| JP2010067661A | 2010-03-25 | |||
| JPH02276088A | 1990-11-09 |
Tadashi Takahashi
Naoki Ofusa
Kazunori Onami