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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012064854
Kind Code:
A
Abstract:

To provide a semiconductor device with an active region having less variation in stress distribution though having a complicated shape.

The semiconductor device of one embodiment comprises a substrate having an element isolation region, a plurality of quadrangle active regions on the substrate, which are isolated by the element isolation region and each having an impurity diffusion region, and a large active region which is an assembly of the plurality of active regions having a contour shape including stepped portions. The impurity diffusion regions facing each other across the element isolation region among the impurity regions of the plurality of active regions are electrically connected.


Inventors:
KATO MASAKI
Application Number:
JP2010209224A
Publication Date:
March 29, 2012
Filing Date:
September 17, 2010
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L29/78; H01L21/76; H01L21/768; H01L23/522
Domestic Patent References:
JPH09289251A1997-11-04
JPH02268464A1990-11-02
JP2006005103A2006-01-05
JP2010021469A2010-01-28
JP2009188223A2009-08-20
JPH0471270A1992-03-05
JP2000114262A2000-04-21
JP2006179555A2006-07-06
JPH07307448A1995-11-21
Attorney, Agent or Firm:
Hirohito Katsunuma
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Hakozaki Yukio
Tomoya Deguchi
Jie Yamanoi
Daisuke Kimoto
Takayuki Shigeno