To reduce the area of an ESD protection circuit and the manufacturing cost by further providing an avalanche diode on a collector region side of a lateral IGBT by using a PN junction, and to provide a semiconductor device including the ESD protection circuit that prevents element damage even if a DC current is overlapped.

A semiconductor device comprises a first node receiving an external voltage, a second node receiving a ground voltage, and a protection circuit and an element to be protected that are connected in parallel between the first node and the second node. The protection circuit includes a lateral IGBT whose emitter is connected to the second node, an avalanche diode whose anode is connected to a collector of the lateral IGBT and whose cathode is connected to the first node, and a clamp driving circuit that is connected between the first and second nodes and is connected to a gate of the lateral IGBT.