Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023043042
Kind Code:
A
Abstract:
To improve switching characteristics.SOLUTION: A semiconductor device 10 comprises: a semiconductor layer 12 that includes a drift region 16; a trench 24 that extends in a thickness direction (Z direction) of the semiconductor layer 12 from a second surface 12B of the semiconductor layer 12; an insulation layer 30 that is provided to embed the trench 24; and a field plate electrode 26 that is formed in the insulation layer 30. The trench 24 has a side wall 24A and a bottom wall 24B that are covered by the insulation layer 30. The field plate electrode 26 faces a depth direction (Z direction) of the trench 24 by being apart from the bottom wall 24B, in the trench 24. A low dielectric region 70 that has a lower dielectric constant than the insulation layer 30 and has insulation properties is formed between the field plate electrode 26 and the bottom wall 24B in the insulation layer 30.SELECTED DRAWING: Figure 1
Inventors:
FUKUNISHI JUNYA
Application Number:
JP2021150522A
Publication Date:
March 28, 2023
Filing Date:
September 15, 2021
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L29/78; H01L21/336; H01L21/8234; H01L29/06; H01L29/41; H01L29/423; H01L29/786
Attorney, Agent or Firm:
Makoto Onda
Hironobu Onda
Hironobu Onda
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