Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3550450
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a reference voltage which has superior temperature characteristics and reduces the power consumption by using a voltage boosted in a chip as the source voltage of a band gap generator.
SOLUTION: The band gap generator(BGR) operates with a high voltage boosted by a charge pump(CP) and a voltage generated by supplying a current IR to the BGR for a certain time is changed in a capacitor CR (dynamic operation). In this case, when a switch S1 connected to an internal power source terminal VP as the output of the BGR and CP reaches a high level, a source voltage is applied to the BGR. Consequently, a current flows and a voltage is outputted. At this time, a switch S2 connecting the output of the BGR and the capacitor CR is held at a high level to turn on, and the output voltage VBG of the BGR is applied to the capacitor CR. After the switch S2 is held at a low level to turn off, the switch S1 is also held at the low level to turn off.
More Like This:
| JPH04152560 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
Inventors:
Takayuki Kawahara
Naoki Miyamoto
Katsutaka Kimura
Naoki Miyamoto
Katsutaka Kimura
Application Number:
JP22499295A
Publication Date:
August 04, 2004
Filing Date:
September 01, 1995
Export Citation:
Assignee:
株式会社日立製作所
日立デバイスエンジニアリング株式会社
日立デバイスエンジニアリング株式会社
International Classes:
H01L27/04; G05F3/30; G11C11/407; H01L21/822; H01L21/8249; H01L27/06; H02M3/07; (IPC1-7): G05F3/30; H01L21/822; H01L21/8249; H01L27/04; H01L27/06; H02M3/07
Domestic Patent References:
| JP7037382A | ||||
| JP56124923A |
Attorney, Agent or Firm:
Yasuo Sakuta
Katsuo Ogawa
Katsuo Ogawa
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