Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP5917842
Kind Code:
B2
Abstract:
An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.
Inventors:
Mitsuhiro Ichijo
Toshiya Endo
Kunihiko Suzuki
Toshiya Endo
Kunihiko Suzuki
Application Number:
JP2011134475A
Publication Date:
May 18, 2016
Filing Date:
June 16, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/316; H01L21/318; H01L21/336
Domestic Patent References:
| JP2010056539A | ||||
| JP2009224479A | ||||
| JP2002299614A | ||||
| JP2010135462A | ||||
| JP2011119355A | ||||
| JP2010062229A | ||||
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| JP2010513204A |
Foreign References:
| US20090184315 | ||||
| US6191463 | ||||
| US20080251819 | ||||
| US20110140116 | ||||
| US20100133525 | ||||
| US20100035379 |
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