Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP5953072
Kind Code:
B2
Abstract:
An object is to provide a semiconductor device to reduce variation in the threshold voltages of memory cells after writing, reduce the operation voltage, or increase the storage capacity. The semiconductor device includes memory cells each including a transistor including an oxide semiconductor, a driver circuit that drives the memory cells, a potential generating circuit that generates potentials supplied to the driver circuit, and a write completion detecting circuit that detects all at once whether rewriting of data into the memory cells is completed or not. The driver circuit includes a data buffer, a writing circuit that writes one potential of the potentials into each of the memory cells as data, a reading circuit that reads the data written into the memory cells, and a verifying circuit that verifies whether the read data agrees with the data held in the data buffer or not.
Inventors:
Yusuke Sekine
Application Number:
JP2012049108A
Publication Date:
July 13, 2016
Filing Date:
March 06, 2012
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G11C11/405; G11C11/56; H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
| JP2000269457A | ||||
| JP1055691A | ||||
| JP200550424A | ||||
| JP2011119675A | ||||
| JP2011123986A | ||||
| JP2011135065A | ||||
| JP2012256398A |
Foreign References:
| US20020145159 | ||||
| US20110101339 | ||||
| US20110116310 | ||||
| US20110128777 | ||||
| US20120033505 |