Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6089852
Kind Code:
B2
Abstract:
A semiconductor device includes a first electrode formed on a substrate, the first electrode being a first electrical potential; and a second electrode formed on the first electrode, the second electrode including a signal wiring that transmits a signal and a planar electrode part with a prescribed area. A shape of the first electrode corresponding to the planar electrode part is made into a slit shape such that a longitudinal direction of a slit is parallel to a direction in which the signal proceeds in the planar electrode part.
Inventors:
Suzuki Toshihide
Masaru Sato
Masaru Sato
Application Number:
JP2013062777A
Publication Date:
March 08, 2017
Filing Date:
March 25, 2013
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01P1/00; H01L21/822; H01L27/04; H01P5/08
Domestic Patent References:
| JP2007324934A | ||||
| JP2009004460A | ||||
| JP4192805A |
Attorney, Agent or Firm:
Atsushi Aoki
Koichi Itsubo
Higuchi Souji
Ryu Kobayashi
Koichi Itsubo
Higuchi Souji
Ryu Kobayashi
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