Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6207460
Kind Code:
B2
Abstract:
A first diode having a front surface anode region is mounted on a P pattern, and a second diode having a front surface cathode region is mounted on an N pattern. At this time, the first diode and the second diode are formed such that a cathode region of a front surface anode region in a first vertical relationship and an anode region of a front surface cathode region in a second vertical relationship are always located as upper portions. The front surface anode region is electrically connected to the front surface cathode region with wires provided thereover.
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Inventors:
Koichi Masuda
Application Number:
JP2014102998A
Publication Date:
October 04, 2017
Filing Date:
May 19, 2014
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L25/07; H01L23/48; H01L25/18; H02M3/155; H02M7/06
Domestic Patent References:
| JP2005197554A | ||||
| JP10210758A | ||||
| JP2014053618A | ||||
| JP2001346384A | ||||
| JP3108749A | ||||
| JP2004193476A |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita
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