Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6216411
Kind Code:
B2
Abstract:
A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.
Inventors:
Shunpei Yamazaki
Atsushi Isobe
Toshihiko Saito
Takehisa Hatano
Hideomi Suzawa
Shinya Sasakawa
Junichi Koizuka
Yuichi Sato
Koji Ohno
Atsushi Isobe
Toshihiko Saito
Takehisa Hatano
Hideomi Suzawa
Shinya Sasakawa
Junichi Koizuka
Yuichi Sato
Koji Ohno
Application Number:
JP2016119557A
Publication Date:
October 18, 2017
Filing Date:
June 16, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L27/06; H01L27/088
Domestic Patent References:
| JP2007027453A | ||||
| JP2009004757A | ||||
| JP2007220818A | ||||
| JP2009283793A | ||||
| JP2007318112A | ||||
| JP2001345442A | ||||
| JP2004079790A | ||||
| JP2011029610A | ||||
| JP2007250983A |
Foreign References:
| US20100327351 | ||||
| US20040061175 | ||||
| US20090065771 |