Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6324557
Kind Code:
B2
Abstract:
To provide a semiconductor device which can write and read a desired potential. The semiconductor device includes a first transistor (Tr), a second Tr, and a capacitor. In the semiconductor device, operation of writing data is performed by a first step and a second step. In the first step, a low voltage is applied to a bit line and a first wiring to turn on the first Tr and the second Tr. In the second step, a first voltage is applied to the first wiring, and application of the low voltage to the bit line is stopped. Operation of reading the data is performed by a third step and a fourth step. In the third step, a high voltage is applied to the first wiring. In the fourth step, application of the high voltage to the first wiring is stopped, and a low voltage is applied to a capacitor line.
Inventors:
Tatsuya Onuki
Application Number:
JP2017023786A
Publication Date:
May 16, 2018
Filing Date:
February 13, 2017
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G11C11/405; H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
| JP2012252766A | ||||
| JP2014199707A | ||||
| JP2014199708A |
Foreign References:
| WO2013153853A1 |
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