Title:
半導体装置
Document Type and Number:
Japanese Patent JP6646363
Kind Code:
B2
Abstract:
According to the present invention, a semiconductor device includes a semiconductor layer, a source electrode provided in the semiconductor layer, a drain electrode provided in the semiconductor layer and disposed away from the source electrode, a first gate electrode provided between the source electrode and the drain electrode and a second gate electrode provided between the source electrode and the drain electrode, the second gate electrode having at least a part thereof located closer to the drain electrode than the first gate electrode. The semiconductor layer includes a first facing part that is a part facing the first gate electrode; and a second facing part that is a part facing the second gate electrode. The first facing part does not conduct when a first gate voltage is 0 V or less. The second facing part does not conduct when a second gate voltage is 0 V or less.
Inventors:
Taku Sato
Uryu Kazuya
Kazuyuki Shoji
Uryu Kazuya
Kazuyuki Shoji
Application Number:
JP2015111897A
Publication Date:
February 14, 2020
Filing Date:
June 02, 2015
Export Citation:
Assignee:
Advantest Corporation
International Classes:
H01L21/337; H01L21/336; H01L21/338; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
| JP2011243978A | ||||
| JP2012195506A | ||||
| JP2013207081A | ||||
| JP2014187085A | ||||
| JP11026776A | ||||
| JP2000183363A | ||||
| JP2011165749A | ||||
| JP2012156164A | ||||
| JP2013098284A | ||||
| JP2014072528A | ||||
| JP2015026629A |
Attorney, Agent or Firm:
Masumi Hosoda