Title:
半導体装置
Document Type and Number:
Japanese Patent JP7066908
Kind Code:
B2
Abstract:
An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
Inventors:
Takanori Matsuzaki
Kiyoshi Kato
Hiroki Inoue
Shuhei Nagatsuka
Kiyoshi Kato
Hiroki Inoue
Shuhei Nagatsuka
Application Number:
JP2021203154A
Publication Date:
May 13, 2022
Filing Date:
December 15, 2021
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/8242; G11C7/12; G11C11/405; G11C11/4096; H01L21/8234; H01L27/06; H01L27/088; H01L27/10; H01L27/108; H01L27/1156; H01L29/786
Domestic Patent References:
| JP2001053167A | ||||
| JP62274773A | ||||
| JP11040772A | ||||
| JP2008042088A | ||||
| JP2002368226A | ||||
| JP2009135350A |