Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH05273625
Kind Code:
A
Abstract:
PURPOSE:To obtain the semiconductor device which can change the degree of coupling by the light signals between light emitting elements and light receiving elements and can provide a learnable neural net. CONSTITUTION:An optical modulating layer 2 two-dimensionally arranged with optical modulating elements is provided between a light emitting layer 1 two- dimensionally arranged with the light emitting elements 1a and a light receiving layer 3 two-dimensionally arranged with the light receiving elements 3a. This optical modulating layer 2 is arranged between the intersected point nearest the light emitting element layer 1 among the intersected points of the plural optical paths connecting the light emitting element 1a and the light receiving elements 3a and the light emitting element layer 1. The respective light emitting elements are constituted by laminating (p) type GaAs semiconductor layers and (n) type GaAs semiconductor layers between first and second electrodes and quantumization levels are provided in both of the (p) type GaAs semiconductor layers and the (n) type GaAs semiconductor layers. The electrons and holes generated by absorbing the light outputted from the light emitting elements 1a are confined respectively in the (n) type GaAs semiconductor layers and the (p) type GaAs semiconductor layers.
Inventors:
Yuichi Matsui
Application Number:
JP6887392A
Publication Date:
October 22, 1993
Filing Date:
March 26, 1992
Export Citation:
Assignee:
KABUSHIKI KAISHA KOBE SEIKO SHO
International Classes:
G02F3/00; G06E3/00; (IPC1-7): G02F3/00; G06E3/00
Attorney, Agent or Firm:
Masanori Fujimaki