SEMICONDUCTOR DEVICE

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0555575

Kind Code:

A

Abstract:

PURPOSE: To incorporate a low and stable resistance value and to provide excellent chemical resistance by forming electrode wirings made of alloy containing Ta and Nb, Nb or metal containing Nb as a main ingredient on a board.

CONSTITUTION: A thin film transistor is formed on an insulating board 1, and has gate electrode wirings 2, 3 made of alloy of Ta and Nb. An insulating anodized film 4 of a self-oxide film treated by an anodizing method is formed on the surface parts of the wirings 2, 3 exposed on the board 1. That is, the film 4 is the oxidized alloy of the Ta and the Nb of materials for a gate electrode wirings. A gate insulating film 5 is formed on the gate electrode wirings 2, 3 to cover the entire board. Since the wirings 2, 3 are formed of the alloy of the Ta and the Nb, the wirings 2, 3 have low specific resistances and become stable body-centered cubic crystalline alloy films.

Inventors:

SHIMADA YASUNORI
GOTO MASAHITO
SAITO HISAFUMI
TANIGUCHI KOJI

Application Number:

JP21903191A

Publication Date:

March 05, 1993

Filing Date:

August 29, 1991

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SHARP KK

International Classes:

G02F1/1343; G02F1/136; G02F1/1368; H01L21/28; H01L21/3205; H01L21/336; H01L23/52; H01L29/49; H01L29/78; H01L29/786; (IPC1-7): G02F1/1343; G02F1/136; H01L21/3205; H01L29/784

Attorney, Agent or Firm:

Shusaku Yamamoto

Next Patent: AIRTIGHT SEAL PACKAGE FOR CRYSTAL OSCILLATOR