Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS52113676
Kind Code:
A
Abstract:
PURPOSE: To avoid formation of a modified layer on the surface part and obtain a high frequency diode, transistor, etc. having the higher dielectric strength of Schottky junctions by growing a GaAs layer on a GaAs substrate and covering this layer with a semi-insulating GaAs layer.
Inventors:
UMEBACHI SHIYOUTAROU
TSUDA NAOYUKI
KANOU KOUTA
TSUDA NAOYUKI
KANOU KOUTA
Application Number:
JP3014476A
Publication Date:
September 22, 1977
Filing Date:
March 19, 1976
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L29/872; H01L21/331; H01L29/47; H01L29/73; (IPC1-7): H01L29/48; H01L29/56
Domestic Patent References:
| JPS487233A |