Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5873124
Kind Code:
A
Abstract:
PURPOSE:To decrease the leakage current between wirings and to improve dampproof as well by a method wherein an insulating layer is made in multilayer structure of an SiO2 and a PSG film. CONSTITUTION:A device 2 such as transistors, diodes is formed on the central recessed section of a substrate 1 and a field oxide film 3 is provided at the outside of the forming face of the device 2 and patterning is applied to an electrode 4 such as aluminum on the device 2. As to the final insulating layer in this example, an SiO2 film 5 is grown with a thickness of 5,000Angstrom by a CVD method, next a PSG film 6 is grown by the same CVD method. The thickness of the SiO2 film and PSG film as a whole is made at 1-3mum. This decreases the leakage current between wirings and superior dumpproof can be obtained by obtaining an insulating layer causing no occurrence of cracks at the time of vapor growth.
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Inventors:
NAKANO ATSUSHI
HARAJIRI SHIYUUICHI
YABU TAKASHI
HARAJIRI SHIYUUICHI
YABU TAKASHI
Application Number:
JP17117381A
Publication Date:
May 02, 1983
Filing Date:
October 26, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L23/522; H01L21/31; H01L21/316; H01L21/768; (IPC1-7): H01L21/88; H01L21/94
Attorney, Agent or Firm:
Koshiro Matsuoka