Title:
半導体装置およびその作製方法
Document Type and Number:
Japanese Patent JP4437523
Kind Code:
B2
Inventors:
Naoki Makita
Misako Nakazawa
Hideto Onuma
Misako Nakazawa
Hideto Onuma
Application Number:
JP2002342851A
Publication Date:
March 24, 2010
Filing Date:
November 26, 2002
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Sharp Corporation
Sharp Corporation
International Classes:
H01L21/20; H01L27/08; H01L21/322; H01L21/336; H01L29/786
Domestic Patent References:
| JP9205213A | ||||
| JP2002305148A | ||||
| JP2004158564A |