Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP4469677
Kind Code:
B2
Abstract:
A first doped layer of a conductivity type opposite to that of source/drain regions is formed in a semiconductor substrate under a gate electrode. A second doped layer of the conductivity type opposite to that of the source/drain regions is formed in the semiconductor substrate below the first doped layer. The first doped layer has a first peak in dopant concentration distribution in the depth direction. The first peak is located at a position shallower than the junction depth of the source/drain regions. The second doped layer has a second peak in dopant concentration distribution in the depth direction. The second peak is located at a position deeper than the first peak and shallower than the junction depth of the source/drain regions. The dopant concentration at the first peak is higher than that at the second peak.
Inventors:
Takato Handa
Kurimoto Kazumi
Kurimoto Kazumi
Application Number:
JP2004227688A
Publication Date:
May 26, 2010
Filing Date:
August 04, 2004
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
H01L29/78; H01L21/336; H01L21/8234; H01L21/8238; H01L27/088; H01L27/092
Domestic Patent References:
| JP6151828A | ||||
| JP2000299462A | ||||
| JP11307766A | ||||
| JP6244196A | ||||
| JP7283413A | ||||
| JP5110081A | ||||
| JP2002198529A | ||||
| JP4324682A | ||||
| JP8250715A | ||||
| JP2001274382A | ||||
| JP5029612A | ||||
| JP2002368212A | ||||
| JP9246538A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori