Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP4803995
Kind Code:
B2
Abstract:
The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to the second conductor plug 62 or the third conductor plug 62.
Inventors:
Naoya Sagita
Yasutaka Ozaki
Koichi Nagai
Hideaki Kikuchi
Yasutaka Ozaki
Koichi Nagai
Hideaki Kikuchi
Application Number:
JP2004330438A
Publication Date:
October 26, 2011
Filing Date:
November 15, 2004
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
H01L27/105; H01L21/02; H01L21/31; H01L21/469; H01L21/8234; H01L21/8242; H01L21/8244; H01L21/8246; H01L23/48; H01L23/52; H01L27/06; H01L27/108; H01L27/115; H01L29/40; H01L29/76; H01L29/94; H01L31/119
Domestic Patent References:
| JP2001291843A | ||||
| JP2003282825A | ||||
| JP2003204040A | ||||
| JP2002305289A | ||||
| JP2003152165A | ||||
| JP2003158247A |
Attorney, Agent or Firm:
Yoshito Kitano