To uniformly depress a lead frame 4 to a second insulating layer 3 to sufficiently cure a first insulating layer 2 and the second insulating layer 3 by avoiding an adverse effect on a semiconductor element due to heating for curing the first insulating layer 2 and the second insulating layer 3.
A joint strength between the second insulating layer 3 and the lead frame 4 is increased by forming a hardened first insulating layer 2 on a heatsink 1, forming a half-cured second insulating layer 3 with its hardness lower than that of the first insulating layer 2 on the first insulating layer 2, and depressing the lead frame 4 to the second insulating layer 3 and thermosetting the second insulating layer 3. Semiconductor elements 5a, 5b, 5c, 5d, 5e, 5f are mounted on the lead frame 4, and the semiconductor elements 5a, 5b, 5c, 5d, 5e, 5f are sealed by a resin 7 for sealing so that the lower surface of the heatsink 1 and a part of the lead frame 4 are exposed.
COPYRIGHT: (C)2009,JPO&INPIT
Akifumi Yokomizo
Hideaki Baba
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